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UHVDC hitachi and abb density sensor

Short Descriptions Proceedings - Messe Frankfurt· PDF fileHitachi Power Semiconductor Device, J; Toru Masuda, Naoki Tega, Kumiko Konishi, Ryusei Fujita, Hiroyuki Matsushima, Akio Shima Hitachi, J; Katsuaki Saito, Hitachi Europe, GB We have developed a 3.3 kV/450 A full-SiC nHPD2 (next High Power Density Dual). The extremely low internal inductance of the package can make the best use of full-SiC.

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